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RFP50N06
Typical Performance Curves Unless Otherwise Speci?ed
(Continued)
300
100
STARTING T J = 25 o C
125
100
V GS = 10V
V GS = 8V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
V GS = 7V
75
10
STARTING T J = 150 o C
If R = 0
t AV = (L) (I AS ) / (1.3 RATED BV DSS - V DD )
50
25
V GS = 6V
V GS = 5V
If R ≠ 0
t AV = (L/R) ln [(I AS *R) / (1.3 RATED BV DSS - V DD ) + 1]
1
0.01 0.1 1
10
0
0
1.5
3.0
4.5
V GS = 4V
6.0
7.5
t AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes 9321 and 9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
125
100
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
-55 o C
25 o C
2.5
2.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 10V, I D = 50A
175 o C
75
50
25
0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
2.0
1.5
1.0
0.5
0
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
V GS = V DS , I D = 250 μ A
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
I D = 250 μ A
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
?2002 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
RFP50N06 Rev. C0
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